MRF5S21045NR1 MRF5S21045NBR1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for W-CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
· Typical 2-Carrier W-CDMA Performance: V

= 28 Volts, I

= 500 mA,

out

= 10 Watts Avg., Full Frequency Band, Channel Bandwidth =

3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain -- 14.5 dB

Drain Efficiency -- 25.5%

IM3 @ 10 MHz Offset -- -37 dBc in 3.84 MHz Channel Bandwidth

ACPR @ 5 MHz Offset -- -39 dBc in 3.84 MHz Channel Bandwidth

· Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 45 Watts CW

Output Power

Features
· Characterized with Series Equivalent Large-Signal Impedance Parameters
· Internally Matched for Ease of Use
· Qualified Up to a Maximum of 32 V

Operation

· Integrated ESD Protection
· 200°C Capable Plastic Package
· N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
· In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

DSS

-0.5, +68

Vdc

Gate-Source Voltage

-0.5, +15

Vdc

Total Device Dissipation @ T

= 25°C

Derate above 25°C

130

0.74

W/°C

Storage Temperature Range

stg

- 65 to +150

°C

Operating Junction Temperature

200

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

(1,2)

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 45 W CW

Case Temperature 79°C, 10 W CW

1.35
1.48

°C/W

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

Document Number: MRF5S21045N

Rev. 3, 5/2006

Freescale Semiconductor

Technical Data

MRF5S21045NR1

MRF5S21045NBR1

2110-2170 MHz, 10 W AVG., 28 V

2 x W-CDMA

LATERAL N-CHANNEL

RF POWER MOSFETs

CASE 1484-04, STYLE 1

TO-272 WB-4

PLASTIC

MRF5S21045NBR1

CASE 1486-03, STYLE 1

TO-270 WB-4

PLASTIC

MRF5S21045NR1

RF Device Data

Freescale Semiconductor

MRF5S21045NR1 MRF5S21045NBR1

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22-A114)

1C (Minimum)

Machine Model (per EIA/JESD22-A115)

A (Minimum)

Charge Device Model (per JESD22-C101)

IV (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22-A113, IPC/JEDEC J-STD-020

260

°C

Table 5. Electrical Characteristics

= 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

= 68 Vdc, V

= 0 Vdc)

DSS

Adc

Zero Gate Voltage Drain Leakage Current

= 28 Vdc, V

= 0 Vdc)

DSS

Adc

Gate-Source Leakage Current

= 5 Vdc, V

= 0 Vdc)

GSS

Adc

On Characteristics

Gate Threshold Voltage

= 10 Vdc, I

= 120 Adc)

GS(th)

3.5

Vdc

Gate Quiescent Voltage

= 28 Vdc, I

= 500 mAdc)

GS(Q)

3.8

Vdc

Drain-Source On-Voltage

= 10 Vdc, I

= 1.2 Adc)

DS(on)

0.2

0.35

Vdc

Forward Transconductance

= 10 Vdc, I

= 1.2 Adc)

3.2

Dynamic Characteristics

(1)

Reverse Transfer Capacitance

= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V

= 0 Vdc)

rss

0.9

Functional Tests (In Freescale Test Fixture, 50 ohm system) V

= 28 Vdc, I

= 500 mA, P

out

= 10 W Avg., f1 = 2112.5 MHz,

f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01%

Probability on CCDF.

Power Gain

13.5

14.5

16.5

Drain Efficiency

25.5

Intermodulation Distortion

IM3

-37

-35

dBc

Adjacent Channel Power Ratio

ACPR

-39

-37

dBc

Input Return Loss

IRL

-12

-9

1. Part is internally matched both on input and output.

MRF5S21045NR1 MRF5S21045NBR1

RF Device Data

Freescale Semiconductor

Figure 1. MRF5S21045NR1(NBR1) Test Circuit Schematic

0.500 x 1.000 Microstrip

Z8, Z13

0.270 x 0.080 Microstrip

Z10

0.789 x 0.080 Microstrip

Z11

0.527 x 0.080 Microstrip

Z12

0.179 x 0.080 Microstrip

PCB

Taconic TLX8-0300, 0.030,

= 2.55

Z1, Z9

0.250 x 0.080 Microstrip

0.987 x 0.080 Microstrip

0.157 x 0.080 Microstrip

0.375 x 0.080 Microstrip

0.480 x 1.000 Microstrip

0.510 x 0.080 Microstrip

BIAS

SUPPLY

C10

C13

OUTPUT

INPUT

Z13

Z12

Z11

DUT

C11

Z10

C12

C15

C14

Table 6. MRF5S21045NR1(NBR1) Test Circuit Component Designations and Values

Part

Description

Part Number

Manufacturer

220 nF Chip Capacitor (1812)

1812Y224KXA

Vishay -Vitramon

C2, C3, C7, C12, C13

6.8 pF 100B Chip Capacitors

100B6R8CW

ATC

C4, C5, C14, C15

6.8 F Chip Capacitors (1812)

C4532X5R1H685MT

TDK

220 F, 63 V Electrolytic Capacitor, Radial

13668221

Philips

C8, C10

1 pF 100B Chip Capacitors

100B1R0BW

ATC

1.5 pF 100B Chip Capacitor

100B1R5BW

ATC

C11

0.5 pF 100B Chip Capacitor

100B0R5BW

ATC

R1, R2

10 kW, 1/4 W Chip Resistors

10 W, 1/4 W Chip Resistor

MRF5S21045NR1 MRF5S21045NBR1

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS

, POWER GAIN (dB)

IRL, INPUT RETURN LOSS (dB)

IM3 (dBc), ACPR (dBc)

-20

-8

-11

-14

-17

IRL, INPUT RETURN LOSS (dB)

IM3 (dBc), ACPR (dBc)

-22

-10

-13

-16

-19

2220

2060

IRL

ACPR

IM3

f, FREQUENCY (MHz)

Figure 3. 2-Carrier W-CDMA Broadband Performance @ P

out

= 10 Watts

2200

2180

2160

2140

2120

2100

2080

13.4

15.2

-44

-32

-36

-40

f, FREQUENCY (MHz)

Figure 4. 2-Carrier W-CDMA Broadband Performance @ P

out

= 20 Watts

Figure 5. Two-Tone Power Gain versus

Output Power

Figure 6. Third Order Intermodulation Distortion

versus Output Power

100

= 800 mA

650 mA

out

, OUTPUT POWER (WATTS) PEP

= 28 Vdc

f1 = 2135 MHz, f2 = 2145 MHz
Two -Tone Measurements

-40

-10

out

, OUTPUT POWER (WATTS) PEP

-20

-30

100

-60

-50

, DRAIN

EFFICIENCY (%)

, DRAIN

EFFICIENCY (%)

, POWER GAIN (dB)

INTERMODULA

TION DIST

ORTION

(dBc)

IMD, THIRD ORDER

14.8

14.6

14.4

14.2

13.8

13.6

-28

= 28 Vdc, P

out

= 10 W (Avg.), I

= 500 mA

2 -Carrier W-CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)

2220

2060

2200

2180

2160

2140

2120

2100

2080

14.8

-34

-22

-26

-30

14.4

14.2

13.8

13.6

13.4

13.2

-18

14.6

IRL

ACPR

IM3

= 28 Vdc, P

out

= 20 W (Avg.), I

= 500 mA

2 -Carrier W-CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)

500 mA

350 mA

200 mA

= 200 mA

650 mA

800 mA

500 mA

350 mA

= 28 Vdc

f1 = 2135 MHz, f2 = 2145 MHz
Two -Tone Measurements

RF Device Data

Freescale Semiconductor

MRF5S21045NR1 MRF5S21045NBR1

TYPICAL CHARACTERISTICS

Figure 7. Intermodulation Distortion Products

versus Tone Spacing

-60

-25

0.1

7th Order

TWO -TONE SPACING (MHz)

= 28 Vdc, P

out

= 45 W (PEP), I

= 500 mA

Two -Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz

5th Order

3rd Order

-30

-35

-40

-45

-50

-55

100

IMD, INTERMODULA

TION

DIST

ORTION

(dBc)

Figure 8. Pulse CW Output Power versus

Input Power

P3dB = 48.17 dBm (65.6 W)

, INPUT POWER (dBm)

= 28 Vdc, I

= 500 mA

Pulsed CW, 8

sec(on), 1 msec(off)

f = 2140 MHz

Actual

Ideal

P1dB = 47.60 dBm (57.5 W)

out

, OUTPUT POWER (dBm)

IM3 (dBc), ACPR (dBc)

Figure 9. 2-Carrier W-CDMA ACPR, IM3,

Power Gain and Drain Efficiency

versus Output Power

out

, OUTPUT POWER (WATTS) AVG.

-10

-20

-30

-40

-50

100

= 28 Vdc, I

= 500 mA

f1 = 2135 MHz, f2 = 2145 MHz
2 x W-CDMA, 10 MHz
@ 3.84 MHz Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)

, DRAIN EFFICIENCY (%), G

, POWER GAIN (dB)

100

0.1

out

, OUTPUT POWER (WATTS) CW

Figure 10. Power Gain and Drain Efficiency

versus CW Output Power

= 28 Vdc

= 500 mA

f = 2140 MHz

, DRAIN EFFICIENCY (%)

, POWER GAIN (dB)

Figure 11. Power Gain versus Output Power

out

, OUTPUT POWER (WATTS) CW

, POWER GAIN (dB)

= 12 V

16 V

= 500 mA

f = 2140 MHz

= -30

IM3

-30

ACPR

-30

= -30

-30

20 V

24 V

28 V

32 V

MRF5S21045NR1 MRF5S21045NBR1

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS

210

, JUNCTION TEMPERATURE (

°C)

Figure 12. MTTF Factor versus Junction Temperature

This above graph displays calculated MTTF in hours x ampere

drain current. Life tests at elevated temperatures have correlated to
better than

±10% of the theoretical prediction for metal failure. Divide

MTTF factor by I

for MTTF in a particular application.

110

130

160

180

200

MTTF

F
ACT

OR (HOURS x AMPS

)

100

120

140 150

170

190

W-CDMA TEST SIGNAL

0.0001

100

PEAK -TO -AVERAGE (dB)

Figure 13. CCDF W-CDMA 3GPP, Test Model 1,

64 DPCH, 67% Clipping, Single-Carrier Test Signal

0.1

0.01

0.001

Figure 14. 2-Carrier W-CDMA Spectrum

f, FREQUENCY (MHz)

3.84 MHz
Channel BW

-IM3 in

3.84 MHz BW

+IM3 in
3.84 MHz BW

-ACPR in

3.84 MHz BW

+ACPR in
3.84 MHz BW

PROBABILITY (%)

(dB)

+20

+30

-10

-40

-50

-60

-70

-80

-20

-5

-10

-15

-20

-25

-30

W -CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @

$5 MHz Offset. IM3 Measured in

3.84 MHz Bandwidth @

$10 MHz Offset. PAR =

8.5 dB @ 0.01% Probability on CCDF

RF Device Data

Freescale Semiconductor

MRF5S21045NR1 MRF5S21045NBR1

PACKAGE DIMENSIONS

TO-270 WB-4

MRF5S21045NR1

CASE 1486-03

ISSUE C

DATUM
PLANE

BOTTOM VIEW

PIN 5

NOTE 8

DRAIN LEAD

aaa

NOTES:

1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES

PER ASME Y14.5M-1994.

3. DATUM PLANE -H- IS LOCATED AT THE TOP OF

LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.

4. DIMENSIONS

"D" AND "E1" DO NOT INCLUDE

MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS

"D" AND "E1" DO

INCLUDE MOLD MISMATCH AND ARE DETER-
MINED AT DATUM PLANE -H-.

5. DIMENSION

"b1" DOES NOT INCLUDE DAMBAR

PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE

"b1" DIMENSION AT MAXIMUM MATERIAL

CONDITION.

6. DATUMS -A- AND -B- TO BE DETERMINED AT

DATUM PLANE -H-.

7. DIMENSION A2 APPLIES WITHIN ZONE

"J" ONLY.

8. HATCHING REPRESENTS THE EXPOSED AREA

OF THE HEAT SLUG.

ZONE J

DIM

MIN

MAX

MIN

MAX

MILLIMETERS

.100

.104

2.54

2.64

INCHES

.039

.043

0.99

1.09

.040

.042

1.02

1.07

.712

.720

18.08

18.29

.688

.692

17.48

17.58

.011

.019

0.28

0.48

.600

- - -

15.24

- - -

.551

.559

14.2

.353

.357

8.97

9.07

.132

.140

3.35

3.56

.124

.132

3.15

3.35

.270

- - -

6.86

- - -

.164

.170

4.17

4.32

.007

.011

0.18

0.28

.025 BSC

.106 BSC

0.64 BSC

2.69 BSC

STYLE 1:

PIN 1. DRAIN

2. DRAIN
3. GATE
4. GATE
5. SOURCE

aaa

.004

0.10

GATE LEAD

SEATING
PLANE

ÇÇÇÇÇÇ

NOTE 7

.346

.350

8.79

8.89

RF Device Data

Freescale Semiconductor

MRF5S21045NR1 MRF5S21045NBR1

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Document Number: MRF5S21045N

Rev. 3, 5/2006

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